Type | Description | Source |
---|---|---|
Diode | Diode model based on Shockley equation | diode.va |
Thin-Film MOS | SOI Thin-Film four terminal,fully depleted, back-surface MOS model | thinfilm_mos.va |
Operational Amplifier | Model for an operational amplifier | opamp.va |
Josephson Tunnel Contact | Josephson tunnel device model | josephson_contact.va |
Module Name | diode |
---|---|
Terminals | anode: positive terminal : inout electrical cathode: negative terminal : inout electrical |
Parameter | area: device area = 1 from (0:inf) is: saturation current = 1e-14 from (0:inf) n: emission coefficient = 1 from (0:inf) cjo: zero-bias junction capacitance = 0 from [0:inf) m: grading coefficient = 0.5 from [0:inf) phi: body potential = 0.7 exclude 0 fc: forward bias capacitance factor = 0.5 from (0:1] tt: transit time = 1p from [0:inf) bv: reverse breakdown voltage = inf from [0:inf) rs: series resistance = 0 from [0:inf) |
Module Name | thinfilm_mos |
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Terminals | nd: drain terminal : inout electrical ngf: front gate terminal : inout electrical ns: source terminal : inout electrical ngb: back gate terminal : inout electrical |
Parameter | l: device length (m) = 10u from (0:inf) w: device width (m) = 10u from (0:inf) toxf: front gate oxide thickness (m) = 20n from (0:inf) toxb: back gate oxide thickness (m) = 0.5u from (0:inf) nsub: substrate doping (1/cm^3) = 1.0e14 from (0:inf) ngate: gate doping (1/cm^3) = 1.0e19 from (0:inf) nbody: body doping (1/cm^3) = 5.0e15 from (0:inf) tb: body thickness (m) = 0.1u from (0:inf) u0: surface mobility = 700 from (0:inf) lambda: channel length modulation = 0.05 type: type (1=nmos,-1=pmos) = 1 from [-1:1] exclude 0 |
Module Name | opamp |
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Terminals | vinp: positive input terminal : inout electrical vinm: negative input terminal : inout electrical vdd: positive power supply : inout electrical vss: negative power supply : inout electrical voutp: positive output terminal : inout electrical voutm: negative output terminal : inout electrical |
Parameter | gain: open loop gain (dB) = 100 from (0:inf) three_dB_freq: 3dB frequency (Hz) = 1M from (0:inf) rin: input resistance (O) = 1M from (0:inf) cin: input capacitance (F) = 1n from (0:inf) iout_max: maximum output current (A) = 100n from (0:inf) vout_offset: dc output voltage offset (V) = 0 rout: output resistance (O) = 80 from (0:inf) volc: output voltage saturation coefficient = 1 |
Module Name | josephson_contact |
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Terminals | p1,p2,p3,p4: contact terminal : inout electrical |
Parameter | cj: junction capacitance (F) = 0.5p from (0.33p:1p) rj: junction resistance (Ohm) = 1 from (0.5:25) i0: junction current amplitude (A) = 10u from (5:1000u) |
I | Attachment | Action | Size | Date | Who | Comment |
---|---|---|---|---|---|---|
va | diode.va | manage | 2.0 K | 2012-09-14 - 15:39 | DavidMiller | Diode model based on Shockley equation |
va | josephson_contact.va | manage | 1.4 K | 2012-09-14 - 15:39 | DavidMiller | Josephson tunnel device model |
va | opamp.va | manage | 2.8 K | 2012-09-14 - 15:39 | DavidMiller | Model for an operational amplifier |
va | thinfilm_mos.va | manage | 5.8 K | 2012-09-14 - 15:39 | DavidMiller | SOI Thin-Film four terminal,fully depleted, back-surface MOS model |