AmsExamplesSDM < VerilogAMS

VerilogAMS Web>AmsExamples>AmsExamplesSDM (2012-09-14, DavidMiller) (raw view)EditAttach

---+ Semiconductor Device Models (SDM)
| *Type* | *Description* | *Source* |
| [[#Diode][Diode]] | Diode model based on Shockley equation | [[%ATTACHURL%/diode.va][diode.va]] |
| [[#TFMOS][Thin-Film MOS]] | SOI Thin-Film four terminal,fully depleted, back-surface MOS model | [[%ATTACHURL%/thinfilm_mos.va][thinfilm_mos.va]] |
| [[#OpAmp][Operational Amplifier]] | Model for an operational amplifier | [[%ATTACHURL%/opamp.va][opamp.va]] |
| [[#JTC][Josephson Tunnel Contact]] | Josephson tunnel device model | [[%ATTACHURL%/josephson_contact.va][josephson_contact.va]] |
---++ <a name="Diode">Diode</a>
| *Module Name* | diode |
| *Terminals* | anode: positive terminal : inout electrical<br />cathode: negative terminal : inout electrical |
| *Parameter* | area: device area = 1 from (0:inf)<br /> is: saturation current = 1e-14 from (0:inf)<br /> n: emission coefficient = 1 from (0:inf)<br /> cjo: zero-bias junction capacitance = 0 from [0:inf)<br /> m: grading coefficient = 0.5 from [0:inf)<br /> phi: body potential = 0.7 exclude 0<br /> fc: forward bias capacitance factor = 0.5 from (0:1]<br /> tt: transit time = 1p from [0:inf)<br /> bv: reverse breakdown voltage = inf from [0:inf)<br /> rs: series resistance = 0 from [0:inf) |
---++ <a name="TFMOS">Thin-Film MOS</a>
| *Module Name* | thinfilm_mos |
| *Terminals* | nd: drain terminal : inout electrical<br /> ngf: front gate terminal : inout electrical<br /> ns: source terminal : inout electrical<br /> ngb: back gate terminal : inout electrical |
| *Parameter* | l: device length (m) = 10u from (0:inf)<br /> w: device width (m) = 10u from (0:inf)<br /> toxf: front gate oxide thickness (m) = 20n from (0:inf)<br /> toxb: back gate oxide thickness (m) = 0.5u from (0:inf)<br /> nsub: substrate doping (1/cm^3) = 1.0e14 from (0:inf)<br /> ngate: gate doping (1/cm^3) = 1.0e19 from (0:inf)<br /> nbody: body doping (1/cm^3) = 5.0e15 from (0:inf)<br /> tb: body thickness (m) = 0.1u from (0:inf)<br /> u0: surface mobility = 700 from (0:inf)<br /> lambda: channel length modulation = 0.05<br /> type: type (1=nmos,-1=pmos) = 1 from [-1:1] exclude 0 |
---++ <a name="OpAmp">Operational Amplifier</a>
| *Module Name* | opamp |
| *Terminals* | vinp: positive input terminal : inout electrical<br /> vinm: negative input terminal : inout electrical<br /> vdd: positive power supply : inout electrical<br /> vss: negative power supply : inout electrical<br /> voutp: positive output terminal : inout electrical<br /> voutm: negative output terminal : inout electrical |
| *Parameter* | gain: open loop gain (dB) = 100 from (0:inf)<br /> three_dB_freq: 3dB frequency (Hz) = 1M from (0:inf)<br /> rin: input resistance (O) = 1M from (0:inf)<br /> cin: input capacitance (F) = 1n from (0:inf)<br /> iout_max: maximum output current (A) = 100n from (0:inf)<br /> vout_offset: dc output voltage offset (V) = 0<br /> rout: output resistance (O) = 80 from (0:inf)<br /> volc: output voltage saturation coefficient = 1 |
---++ <a name="JTC">Josephson Tunnel Contact</a>
| *Module Name* | josephson_contact |
| *Terminals* | p1,p2,p3,p4: contact terminal : inout electrical |
| *Parameter* | cj: junction capacitance (F) = 0.5p from (0.33p:1p)<br /> rj: junction resistance (Ohm) = 1 from (0.5:25)<br /> i0: junction current amplitude (A) = 10u from (5:1000u) |

-- Main.DavidMiller - 2011-03-01

Attachments

I	Attachment	Action	Size	Date	Who	Comment
va	diode.va	manage	2.0 K	2012-09-14 - 15:39	DavidMiller	Diode model based on Shockley equation
va	josephson_contact.va	manage	1.4 K	2012-09-14 - 15:39	DavidMiller	Josephson tunnel device model
va	opamp.va	manage	2.8 K	2012-09-14 - 15:39	DavidMiller	Model for an operational amplifier
va	thinfilm_mos.va	manage	5.8 K	2012-09-14 - 15:39	DavidMiller	SOI Thin-Film four terminal,fully depleted, back-surface MOS model

Topic revision: r3 - 2012-09-14 - 15:39:55 - DavidMiller

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